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FDP7042L / FDB7042L
April 2001
FDP7042L / FDB7042L
N-Channel Logic Level PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for "low side" synchronous rectifier operation, providing an extremely low RDS(ON) .
Features
* 50 A, 30 V. RDS(ON) = 9 m @ VGS = 4.5 V RDS(ON) = 7.5 m @ VGS = 10 V
* Critical DC electrical parameters specified at elevated temperature * High performance trench technology for extremely low RDS(ON) * 175C maximum junction temperature rating
Applications
* Synchronous rectifier * DC/DC converter
D
D
G
G D S TO-220
FDP Series
G
S
TO-263AB
FDB Series
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
30 12
(Note 1) (Note 1)
Units
V V A W WC C
50 150 83 0.48 -65 to +175
Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range
Thermal Characteristics
RJC RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1.8 62.5 C/W C/W
Package Marking and Ordering Information
Device Marking FDB7042L FDP7042L Device FDB7042L FDP7042L Reel Size 13'' Tube Tape width 24mm n/a Quantity 800 units 45
2000 Fairchild Semiconductor Corporation
FDP7042L Rev C(W)
FDP7042L / FDB7042L
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSSF IGSSR
TA = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 24 V, VGS = 12 V, VGS = -12 V VGS = 0 V VDS = 0 V VDS = 0 V
Min
30
Typ
Max Units
V
Off Characteristics
24 1 100 -100 mV/C A nA nA
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance
VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 4.5 V, ID = 25A ID = 25A VGS = 10 V, VGS= 4.5 V, ID =25A, TJ=125C VGS = 4.5 V, VDS = 5V, VDS = 10 V ID = 25 A
0.8
1.2 -4.1 6.2 5.5 9.6
2
V mV/C
9 7.5 16
m A
ID(on) gFS
On-State Drain Current Forward Transconductance
60 117
S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
2418 VDS = 15 V, V GS = 0 V, f = 1.0 MHz 549 243
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
21 VDD = 15 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 20 60 30 32 VDS = 15 V, ID = 50 A, VGS = 4.5 V 10 9
34 32 96 48 51
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
IS VSD
Notes: 1. Maximum continuous current is limited by the package. 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 25 A Voltage
50
(Note 2)
A V
0.8
1.3
FDP7042L Rev C(W)
FDP7042L / FDB7042L
Typical Characteristics
150
2 VGS = 4.5V 4.0V 3.5V 1.8 VGS = 2.5V 3.0V 1.6 1.4 3.0V 3.5V 1.2 2.5V 1 0.8 0 1 2 3 4 5 0 30 60 90 120 150 4.0V 4.5V
120
90
60
30
0
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.025
2 1.8 1.6 1.4 1.2 1 0.8 ID =25A VGS = 4.5V
ID = 25 A 0.02
0.015 TA = 125 C 0.01 TA = 25 C
o o
0.005 0.6 0.4 -50 -25 0 25 50 75 100
o
0 125 150 175 2 2.5 3 3.5 4 4.5 5 TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation withTemperature.
80 VDS = 5V 60
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 VGS = 0V 10 TA = 125 C 1 25 C -55 C 0.1
o o o
40
o
TA = 125 C 20
25 C 0.01 -55 C
o
o
0 1 1.5 2 2.5 3
0.001 0 0.2 0.4 0.6 0.8 1 1.2 1.4
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDP7042L Rev C(W)
FDP7042L / FDB7042L
Typical Characteristics
5 ID = 50A 4 15V 3 VDS = 5V 10V
6000 5000 CISS 4000 3000 f = 1MHz VGS = 0 V
2 2000 1 COSS 1000 CRSS 0 0 5 10 15 20 25 30 35 0 0 6 12 18 24 30
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
1000
Figure 8. Capacitance Characteristics.
1000 SINGLE PULSE RJC = 1.8C/W TC = 25C
800 100 RDS(ON) LIMIT 1ms 10ms 100ms DC 100s 600
400
10
VGS = 4.5V SINGLE PULSE RJC = 1.8 C/W TC = 25 C
o o
200
1 0.1 1 10 100
0 1 10 t1, TIME (sec) 100 1000
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
1
D = 0.5 0.2 0.1
RJC(t) = r(t) + RJC RJC = 1.8 C/W P(pk) t1 t2 TJ - TC = P * RJC(t) Duty Cycle, D = t1 / t2
0.1
0.05 0.02 0.01 SINGLE PULSE
0.01 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
FDP7042L Rev C(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM
PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM Star* PowerTM StealthTM
SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM UltraFET VCXTM
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Preliminary
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No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H1
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